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| FTM3725 FTM3725 NPN Transistor * This device is designed for high current, low impedance line driver applications. * Sourced from process 26. E1 E2 B1 B2 B4 E3 E4 B4 C2 C2 C1 C1 SOIC-16 C4 C4 C3 C4 Mark: FTM3725 Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 60 6.0 1.2 - 55 ~ 150 Units V V V A C * These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Parameter Test Condition IC = 10mA, IB = 0 IC = 10A, VBE = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 100C IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, VCE = 1.0V, Ta = 55C IC = 300mA, VCE = 1.0V IC = 500mA, VCE = 1.0V IC = 500mA, VCE = 1.0V, Ta = 55C IC = 800mA, VCE = 2.0V IC = 1.0mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 30mA IC = 500mA, IB = 50mA IC = 800mA, IB = 80mA IC = 1.0mA, IB = 100mA IC = 10mA, IB = 1.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 30mA IC = 500mA, IB = 50mA IC = 800mA, IB = 80mA IC = 1.0mA, IB = 100mA 30 60 30 40 35 20 20 25 Min. 40 60 60 6.0 100 10 Typ. Max. Units V V V V nA A Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics * hFE DC Current Gain 180 VCE(sat) Collector-Emitter Saturation Voltage 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V V V V V V V VBE(sat) Base-Emitter Saturation Voltage (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FTM3725 Electrical Characteristics* (Continued) Ta=25C unless otherwise noted Symbol Parameter Small Signal Characteristics fT Cobo Cibo ton td tr toff ts tf Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 30V, IC = 500mA IB1 = IB2 = 50mA Test Condition IC = 50mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz VCC = 30V, VBE = 3.8V IC = 500mA, IB1 = 50mA 20 10 12 250 235 15 Min. 250 15 65 Typ. Max. Units MHz pF pF ns ns ns ns ns ns Switching Characteristics * Pulse Test: Pulse Width 300s, Duty Cycle 1.0% Thermal Characteristics Ta=25C unless otherwise noted Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effectine 4 Die Each Die Max. 1.0 8.0 125 240 Units W mW/C C/W C/W (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FTM3725 Package Dimensions SOIC-16 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. B, June 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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